1n914(a)(b) 500mw 100 volt silicon epitaxial diodes do-35 ? low current leakage ? compression bond construction ? low cost dimensions inches mm dim min max min max note a --- .166 --- 4.2 b --- .079 --- 2.00 c --- .020 --- .52 d 1.000 --- 25.40 ---
a b c d d cathode mark
omp onents 20736 marilla street chatsworth
mcc ? operating temperature: -55 o c to +150 o c ? storage temperature: -55 o c to +150 o c ? maximum thermal resistance; 300 o c/w junction to ambient electrical characteristics @ 25 o c unless otherwise specified maximum repetitive reverse voltage v rrm 100v average rectified forward current i o 200ma power dissipation p d 500mw junc tion temperature t j 150 o c peak forward surge current i fsm 1.0a 4.0a pulse width=1.0 second pulse width=1.0 microsecond minimum breakdown voltage v r 100v 75v i r =100ua, i r =5.0ua maximum instantaneous forward voltage 1n914 1n914 a 1n914 b 1n914 b v f 1.0v 720mv t j = 25 o c i fm = 10ma; i fm = 20ma; i fm = 100ma; i fm = 5.0ma; maximum reverse current i r 25na 5.0ua 50ua v r =20v, t j =25 o c, v r =75v, t j =25 o c, v r =20v, t j =150 o c typical junction capacitance c j 4.0pf measured at 1.0mhz, v r =0v reverse recovery time t rr 4.0ns i f =10ma v r = 6v r l =100 , i rr =1.0ma *pulse test: pulse width 300 usec, dut y c y cle 2% revision: 6 2008/02/01 tm micro commercial components www. mccsemi .com 1 of 4 ? marking : cathode band and type number ? lead free finish/rohs compliant (note1) ("p"suffix designates compliant. see ordering information) note: 1. lead in glass exemption applied, see eu directive annex 5. ? moisture sensitivity: level 1 per j-std-020c
admissable power dissipation - milliwatts versus ambient temperature - o c figure 2 forward de rating curve 0 175 50 75 100 125 0 100 200 300 single phase, half wave 60hz resistive or inductive load milliwatts o c 150 400 500 600 junction capacitance - pf versus reverse voltage - volts figure 3 junction capacitance .1 .2 1 .4 2 10 20 40 4 100 200 .1 .2 .6 1 2 10 pf volts 6 4 .4 400 1000 t j =25 o c instantaneous forward current - amperes versus instantaneous forward voltage - volts figure 1 typical forward characteristics 4 6 20 10 milliamps .4 .6 .8 1.0 1.2 1.4 .01 .02 .04 .06 .1 .2 .4 .6 1 2 25 o c volts 1n914 1n914a 1n914b 1n914(a)(b) mcc revision: 6 2008/02 /01 tm micro commercial components www. mccsemi .com 2 of 4
1 100 4 0 200 400 600 8 figure 5 peak forward surge current peak forward surge current - amperes versus number of cycles at 60hz - cycles milliamps cycles 2 61020 60 80 40 800 1000 1 200 figure 4 typical reverse characteristics instantaneous reverse leakage current - nanoamperes versus junction temperature - c t j 40 60 200 100 nanoam p 2 0 120 40 60 80 100 .1 .2 .4 .6 1 2 4 6 10 20 400 600 1000 14 0 1n914(a)(b) o mcc revision: 6 2008/02/01 tm micro commercial components www. mccsemi .com 3 of 4
mcc revision: 6 2008/02/01 tm micro commercial components www. mccsemi .com 4 of 4 products are represented on our website, harmless against all damages. ***applications disclaimer*** ***important notice*** aerospace or military applications. products offer by micro commercial components corp . are not intended for use in medical, micro commercial components corp . reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . micro commercial components corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . the user of products in such applications shall assume all risks of such use and will agree to hold micro commercial components corp . and all the companies whose rdering nformation evice packing part umbertp tapeeel; pcseel part umberap ammo packing;pcsammoo part umberp ulk;pcsag
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